Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Journal Article

Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.

Full Text

Duke Authors

Cited Authors

  • Neogi, A; Everitt, H; Morkoç, H; Kuroda, T; Tackeuchi, A

Published Date

  • March 1, 2003

Published In

Volume / Issue

  • 2 / 1

Start / End Page

  • 10 - 14

International Standard Serial Number (ISSN)

  • 1536-125X

Digital Object Identifier (DOI)

  • 10.1109/TNANO.2003.808513

Citation Source

  • Scopus