Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells

Journal Article

The stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells were analyzed. The room temperature, time-resolved, differential transmission measurements were used to map the carrier relaxation mechanism for above barrier energy excitation. The photoexcited carriers were observed to relax into the quantum wells in less than 1ps while the carrier recombination times were found to be as fast as 30ps.

Full Text

Duke Authors

Cited Authors

  • Özgür, U; Everitt, HO; He, L; Morkoç, H

Published Date

  • June 9, 2003

Published In

Volume / Issue

  • 82 / 23

Start / End Page

  • 4080 - 4082

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.1581385

Citation Source

  • Scopus