Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

Journal Article

A study was performed on ultrafast carrier relaxation and simulated emission (SE) in InGaN multiple quantum wells (MQW). Two InGaN MQW laser structures with different QW In compositions x was used to measure SE. It was found that SE threshold energy densities (Ith) increased with increasing x-dependent QW depth.

Full Text

Duke Authors

Cited Authors

  • Özgür, U; Everitt, HO; Keller, S; DenBaars, SP

Published Date

  • March 3, 2003

Published In

Volume / Issue

  • 82 / 9

Start / End Page

  • 1416 - 1418

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.1557770

Citation Source

  • Scopus