Optical characterization of Eu-doped Β-Ga 2O 3 thin films

Journal Article

Europium-doped Β- Ga2 O3 thin films were grown on double-side polished c -axis (0001) sapphire substrates by pulsed laser deposition at 850 °C. Transmission measurements of the films revealed a sharp band edge with a band gap at 5.0 eV. The films exhibited intense red emission at 611 nm (2.03 eV) due to the transitions from D05 to F27 levels in europium, with intensities that increased with the concentration of europium. Time-resolved photoluminescence measurements revealed a temperature-insensitive lifetime of 1.4 ms, which is much longer than the lifetimes of europium luminescence observed in GaN hosts. © 2006 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Gollakota, P; Dhawan, A; Wellenius, P; Lunardi, LM; Muth, JF; Saripalli, YN; Peng, HY; Everitt, HO

Published Date

  • May 29, 2006

Published In

Volume / Issue

  • 88 / 22

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.2208368

Citation Source

  • Scopus