Synthesis and optical properties of undoped and aluminum doped ZnO nanowires for optoelectronic nanodevice applications

Published

Conference Paper

© 2014 IEEE. Zinc oxide (ZnO) is a major wide band gap semiconductor material for optoelectronic and photonic devices because of its exceptional optical properties, arising from the combination of a wide band gap (~3.37 eV) and a large exciton binding energy (~60 meV) [1]. One-dimensional ZnO nanostructures, such as nanowires and nanorods, further exhibit unique properties that make them attractive for Nan devices, especially in the ultraviolet (UV) spectral range.

Full Text

Duke Authors

Cited Authors

  • Kung, P; Mohanta, A; Simmons, JG; Everitt, HO; Shen, G; Waters, J; Kim, SM

Published Date

  • January 1, 2014

Published In

  • Proceedings 2014 Summer Topicals Meeting Series, Sum 2014

Start / End Page

  • 198 - 199

International Standard Book Number 13 (ISBN-13)

  • 9781479927678

Digital Object Identifier (DOI)

  • 10.1109/SUM.2014.108

Citation Source

  • Scopus