GaN:Eu interrupted growth epitaxy (IGE): Thin film growth and electroluminescent devices

Published

Conference Paper

The GaN:RE phosphor development plays a major role in the GaN:RE AC thick dielectric electroluminescent (TDEL) device optimization. In this paper we report on EL devices fabricated using Eu-doped GaN red phosphors films grown by interrupted growth epitaxy (IGE). IGE consists of a sequence of ON/OFF cycles of the Ga and Eu beams, while the N2 plasma is kept constant during the entire growth time. IGE growth of GaN:Eu resulted in significant enhancement in the Eu emission intensity based primarily at 620.5nm. The increase in the material crystallinity observed with the IGE phosphors appears to be the dominant cause of the emission enhancement. Thick dielectric EL devices fabricated on glass substrates using IGE-grown GaN:Eu have resulted in luminance of ∼ 1000 cd/m2. © 2005 Materials Research Society.

Full Text

Duke Authors

Cited Authors

  • Munasinghe, C; Steckl, A; Nyein, EE; Hömmerich, U; Peng, H; Everitt, H; Fleischman, Z; Dierolf, V; Zavada, J

Published Date

  • January 1, 2005

Published In

Volume / Issue

  • 866 /

Start / End Page

  • 41 - 52

International Standard Serial Number (ISSN)

  • 0272-9172

Digital Object Identifier (DOI)

  • 10.1557/proc-866-v3.1

Citation Source

  • Scopus