Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

Journal Article

Photoluminescence (PL) excitation spectroscopy mapped the photoexcitation wavelength dependence of the red luminescence (D05 → F27) from GaN:Eu. Time-resolved PL measurements revealed that for excitation at the GaN bound exciton energy, the decay transients are almost temperature insensitive between 86 K and 300 K, indicating an efficient energy transfer process. However, for excitation energies above or below the GaN bound exciton energy, the decaying luminescence indicates excitation wavelength- and temperature-dependent energy transfer influenced by intrinsic and Eu3+ -related defects. © 2005 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Peng, HY; Lee, CW; Everitt, HO; Lee, DS; Steckl, AJ; Zavada, JM

Published Date

  • January 31, 2005

Published In

Volume / Issue

  • 86 / 5

Start / End Page

  • 1 - 3

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.1861132

Citation Source

  • Scopus