Size dependence of carrier recombination efficiency in GaN quantum dots

Journal Article

The dependence of radiative recombination rate and efficiency on GaN quantum-dot (QD) size and temperature is studied by time-resolved photoluminescence (PL) spectroscopy. The emission is dominated by radiative recombination at low temperatures (<125 K) and exhibits high PL efficiency at room temperature. The radiative lifetime and the relative quantum efficiency decrease with the decreasing QD size. © 2005 IEEE.

Full Text

Duke Authors

Cited Authors

  • Neogi, A; Everitt, H; Morkoç, H; Kuroda, T; Tackeuchi, A

Published Date

  • March 1, 2005

Published In

Volume / Issue

  • 4 / 2

Start / End Page

  • 297 - 299

International Standard Serial Number (ISSN)

  • 1536-125X

Digital Object Identifier (DOI)

  • 10.1109/TNANO.2004.834170

Citation Source

  • Scopus