Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Journal Article

Low defect density asymmetric multiple quantum wells (MQWs) of InGaN/GaN grown on non-polar a-plane GaN substrates were investigated using time-integrated and time-resolved photoluminescence spectroscopy. Comparison of these spectra with the predicted emission energies reveals that these QWs may be spectrally resolved at low temperatures. However, a combination of thermal activation and resonant tunneling of carriers increasingly coupled the QWs, favoring emission from the lowest energy QWs with increasing temperature in a manner analogous to MQWs composed of other non-polar semiconductor materials but unlike most InGaN MQWs grown on polar substrates and influenced by the strong polarization-dependent effects. © 2013 AIP Publishing LLC.

Full Text

Duke Authors

Cited Authors

  • Roberts, AT; Mohanta, A; Everitt, HO; Leach, JH; Van Den Broeck, D; Hosalli, AM; Paskova, T; Bedair, SM

Published Date

  • October 28, 2013

Published In

Volume / Issue

  • 103 / 18

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.4827536

Citation Source

  • Scopus