Skip to main content

Improved Performance of Field Emission Vacuum Microelectronic Devices for Integrated Circuits

Publication ,  Journal Article
Radauscher, EJ; Gilchrist, KH; Di Dona, ST; Russell, ZE; Piascik, JR; Amsden, JJ; Parker, CB; Stoner, BR; Glass, JT
Published in: IEEE Transactions on Electron Devices
September 1, 2016

The movement from discrete transistors to integrated silicon circuits led to the rapid evolution of microscale electronics, but there has been no equivalent transition for the vacuum tube transistor. Difficulty integrating devices at microscales has hindered the use of vacuum electronic circuits, despite the unique advantages they offer in selected applications. The development of the field emission microfabricated cathode offers the potential to take advantage of the benefits of the vacuum technology in an integrated platform. This paper utilizes an MEMS carbon nanotube field emission vacuum microelectronic device as an active circuit element. Using a combination of particle trajectory simulation and experimental characterization, we investigated device performance in an integrated platform. Specifically, we present solutions for the operation of multiple devices in close proximity and for enhancing transmission (i.e., reducing grid loss) in vacuum field emission devices. The isolation structures reduced the crosstalk between neighboring devices from 14% on average, to nearly zero. Innovative geometries and a new operational mode reduced the grid loss by nearly three times, improving transmission of the current from the cathode to the anode from 25% from the previous designs to 70% on average. These performance enhancements are the important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.

Duke Scholars

Published In

IEEE Transactions on Electron Devices

DOI

ISSN

0018-9383

Publication Date

September 1, 2016

Volume

63

Issue

9

Start / End Page

3753 / 3760

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Radauscher, E. J., Gilchrist, K. H., Di Dona, S. T., Russell, Z. E., Piascik, J. R., Amsden, J. J., … Glass, J. T. (2016). Improved Performance of Field Emission Vacuum Microelectronic Devices for Integrated Circuits. IEEE Transactions on Electron Devices, 63(9), 3753–3760. https://doi.org/10.1109/TED.2016.2593905
Radauscher, E. J., K. H. Gilchrist, S. T. Di Dona, Z. E. Russell, J. R. Piascik, J. J. Amsden, C. B. Parker, B. R. Stoner, and J. T. Glass. “Improved Performance of Field Emission Vacuum Microelectronic Devices for Integrated Circuits.” IEEE Transactions on Electron Devices 63, no. 9 (September 1, 2016): 3753–60. https://doi.org/10.1109/TED.2016.2593905.
Radauscher EJ, Gilchrist KH, Di Dona ST, Russell ZE, Piascik JR, Amsden JJ, et al. Improved Performance of Field Emission Vacuum Microelectronic Devices for Integrated Circuits. IEEE Transactions on Electron Devices. 2016 Sep 1;63(9):3753–60.
Radauscher, E. J., et al. “Improved Performance of Field Emission Vacuum Microelectronic Devices for Integrated Circuits.” IEEE Transactions on Electron Devices, vol. 63, no. 9, Sept. 2016, pp. 3753–60. Scopus, doi:10.1109/TED.2016.2593905.
Radauscher EJ, Gilchrist KH, Di Dona ST, Russell ZE, Piascik JR, Amsden JJ, Parker CB, Stoner BR, Glass JT. Improved Performance of Field Emission Vacuum Microelectronic Devices for Integrated Circuits. IEEE Transactions on Electron Devices. 2016 Sep 1;63(9):3753–3760.

Published In

IEEE Transactions on Electron Devices

DOI

ISSN

0018-9383

Publication Date

September 1, 2016

Volume

63

Issue

9

Start / End Page

3753 / 3760

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering