Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-x Bix
Publication
, Journal Article
Li, J; Collar, K; Jiao, W; Kong, W; Kuech, TF; Babcock, SE; Brown, A
Published in: Applied Physics Letters
June 6, 2016
The controlled incorporation of Bi into GaAs is a key challenge to synthesizing dilute Bi materials. This work reveals the importance of the surface step density and direction on Bi incorporation. Steps in the [110] direction are demonstrated to enhance Bi incorporation, but at the cost of reduced photoluminescence intensity at a red-shifted peak position, while steps in the [1-10] direction yield the opposite behavior. A qualitative model based on the competitive incorporation of As and Bi at different step edges is used to rationalize the observed differences in Bi incorporation.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
June 6, 2016
Volume
108
Issue
23
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Li, J., Collar, K., Jiao, W., Kong, W., Kuech, T. F., Babcock, S. E., & Brown, A. (2016). Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-x Bix . Applied Physics Letters, 108(23). https://doi.org/10.1063/1.4953408
Li, J., K. Collar, W. Jiao, W. Kong, T. F. Kuech, S. E. Babcock, and A. Brown. “Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-x Bix .” Applied Physics Letters 108, no. 23 (June 6, 2016). https://doi.org/10.1063/1.4953408.
Li J, Collar K, Jiao W, Kong W, Kuech TF, Babcock SE, et al. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-x Bix . Applied Physics Letters. 2016 Jun 6;108(23).
Li, J., et al. “Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-x Bix .” Applied Physics Letters, vol. 108, no. 23, June 2016. Scopus, doi:10.1063/1.4953408.
Li J, Collar K, Jiao W, Kong W, Kuech TF, Babcock SE, Brown A. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-x Bix . Applied Physics Letters. 2016 Jun 6;108(23).
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
June 6, 2016
Volume
108
Issue
23
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences