Relaxation dynamics in rare earth-doped GaN
Publication
, Conference
Peng, HY; Everitt, HO; Munasinghe, C; Lee, DS; Steckl, AJ
Published in: Optics InfoBase Conference Papers
January 1, 2005
Time-resolved photoluminescence spectroscopy of rare earth (Eu, Er, Tm) -doped GaN revealed that optical properties and relaxation dynamics depend surprisingly upon excitation energy, pulse width, temperature, and dopant site. © 2005 Optical Society of America.
Published In
Optics InfoBase Conference Papers
EISSN
2162-2701
ISBN
9781557527974
Publication Date
January 1, 2005
Citation
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Peng, H. Y., Everitt, H. O., Munasinghe, C., Lee, D. S., & Steckl, A. J. (2005). Relaxation dynamics in rare earth-doped GaN. In Optics InfoBase Conference Papers.
Peng, H. Y., H. O. Everitt, C. Munasinghe, D. S. Lee, and A. J. Steckl. “Relaxation dynamics in rare earth-doped GaN.” In Optics InfoBase Conference Papers, 2005.
Peng HY, Everitt HO, Munasinghe C, Lee DS, Steckl AJ. Relaxation dynamics in rare earth-doped GaN. In: Optics InfoBase Conference Papers. 2005.
Peng, H. Y., et al. “Relaxation dynamics in rare earth-doped GaN.” Optics InfoBase Conference Papers, 2005.
Peng HY, Everitt HO, Munasinghe C, Lee DS, Steckl AJ. Relaxation dynamics in rare earth-doped GaN. Optics InfoBase Conference Papers. 2005.
Published In
Optics InfoBase Conference Papers
EISSN
2162-2701
ISBN
9781557527974
Publication Date
January 1, 2005