Hybrid field-effect transistor based on a low-temperature melt-processed channel layer

Published

Journal Article

Hybrid field-effect…. Low-melting point hybrid perovskits have enabled the first demonstration of melt-processed field-effect transistors (FET) channel layers with both large saturation- and linear-regime mobilities. The ability to tailor the melting properties of the semiconducting systems using the organic component of the hybrid, enables a reduction of the melting temperature to values low enough for processing on selected plastic substrates with even lower melting temperatures envisioned as wider range of organic cations is explored. With respect to vapor-phase deposition, melt processing represents a lower-energy process and relaxes requirements for molecular mobility and reorganization on the substrate during deposition.

Full Text

Duke Authors

Cited Authors

  • Mitzi, DB; Dimitrakopoulos, CD; Rosner, J; Medeiros, DR; Xu, Z; Noyan, C

Published Date

  • December 3, 2002

Published In

Volume / Issue

  • 14 / 23

Start / End Page

  • 1772 - 1776

International Standard Serial Number (ISSN)

  • 0935-9648

Digital Object Identifier (DOI)

  • 10.1002/1521-4095(20021203)14:23<1772::AID-ADMA1772>3.0.CO;2-Y

Citation Source

  • Scopus