Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around


Conference Paper

While proven to provide high performance at sub-10 nm lengths, carbon nanotube (CNT) field-effect transistors (FETs) typically employ impractical gate geometries. Here we demonstrate fully self-aligned CNTFETs that include a gate-all-around (GAA) the nanotube channels-the ideal gate geometry for a 1D CNT. These GAA-CNTFETs have 30 nm channel lengths and exhibit n-type operation with high on-currents and good switching behavior that is explained by quantum transport (NEGF) simulations. This work is an important milestone showing that a technologically relevant self-aligned device can be realized with nanotubes. © 2012 IEEE.

Full Text

Duke Authors

Cited Authors

  • Franklin, AD; Koswatta, SO; Farmer, D; Tulevski, GS; Smith, JT; Miyazoe, H; Haensch, W

Published Date

  • December 1, 2012

Published In

International Standard Serial Number (ISSN)

  • 0163-1918

International Standard Book Number 13 (ISBN-13)

  • 9781467348706

Digital Object Identifier (DOI)

  • 10.1109/IEDM.2012.6478979

Citation Source

  • Scopus