Sub-10 nm carbon nanotube transistor


Conference Paper

This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected. Numerical simulations suggest that a possible explanation for the surprisingly good performance is a result of the gate modulating both the charge in the channel and in the contact regions. The unprecedented performance should ignite exciting new research into improving the purity and placement of nanotubes, as well as optimizing CNT transistor structure and integration. Results from aggressively scaling these molecular-channel transistors exhibit their strong suitability for a low-voltage, high-performance logic technology. © 2011 IEEE.

Full Text

Duke Authors

Cited Authors

  • Franklin, AD; Han, SJ; Tulevski, GS; Luisier, M; Breslin, CM; Gignac, L; Lundstrom, MS; Haensch, W

Published Date

  • December 1, 2011

Published In

International Standard Serial Number (ISSN)

  • 0163-1918

International Standard Book Number 13 (ISBN-13)

  • 9781457705052

Digital Object Identifier (DOI)

  • 10.1109/IEDM.2011.6131600

Citation Source

  • Scopus