Graphene technology with inverted-T gate and RF passives on 200 mm platform

Conference Paper

Wafer-scale graphene devices processed entirely in a standard 200 mm silicon fab are demonstrated for the first time. New embedded gate structures enable full saturation of the drain current in graphene FETs with sub-μm channels, resulting in high intrinsic voltage gain. In addition, passive devices were monolithically integrated with graphene transistors to form the first GHz-range graphene IC using large-scale CVD graphene. The demonstration of high performance graphene FETs and IC fabricated using a 200 mm platform is a major step in transitioning this promising material from a scientific curiosity into a real technology. © 2011 IEEE.

Full Text

Duke Authors

Cited Authors

  • Han, SJ; Valdes-Garcia, A; Bol, AA; Franklin, AD; Farmer, D; Kratschmer, E; Jenkins, KA; Haensch, W

Published Date

  • December 1, 2011

Published In

International Standard Serial Number (ISSN)

  • 0163-1918

International Standard Book Number 13 (ISBN-13)

  • 9781457705052

Digital Object Identifier (DOI)

  • 10.1109/IEDM.2011.6131473

Citation Source

  • Scopus