High device yield carbon nanotube NFETs for high-performance logic applications

Conference Paper

We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions. © 2011 IEEE.

Full Text

Duke Authors

Cited Authors

  • Shahrjerdi, D; Franklin, AD; Oida, S; Tulevski, GS; Han, SJ; Hannon, JB; Haensch, W

Published Date

  • December 1, 2011

Published In

International Standard Serial Number (ISSN)

  • 0163-1918

International Standard Book Number 13 (ISBN-13)

  • 9781457705052

Digital Object Identifier (DOI)

  • 10.1109/IEDM.2011.6131596

Citation Source

  • Scopus