Built-in selectors self-assembled into memristors

Conference Paper

We demonstrate an approach to build a selector into ReRAM (memristors) using engineered materials. In this approach, a segment(s) of nonlinear material is self-assembled into the conduction channel (s) (filament) of a memristor. The nonlinear material exhibits a highly nonlinear current-voltage characteristic, which gives rise to a nonlinear i-v characteristic of the memristor in the ON state.

Full Text

Duke Authors

Cited Authors

  • Chakraborty, S; Joshi, S; Xia, Q; Li, H; Chen, Y; Jiang, H; Wu, Q; Barnell, M; Yang, JJ

Published Date

  • July 29, 2016

Published In

Volume / Issue

  • 2016-July /

Start / End Page

  • 181 - 184

International Standard Serial Number (ISSN)

  • 0271-4310

International Standard Book Number 13 (ISBN-13)

  • 9781479953400

Digital Object Identifier (DOI)

  • 10.1109/ISCAS.2016.7527200

Citation Source

  • Scopus