A new self-reference sensing scheme for TLC MRAM

Conference Paper

Density is one of the major design factors of magnetic random access memory (MRAM). Very recently, a tri-level cell (TLC) structure was proposed to enhance the storage density of MRAM. In this work, we propose a new self-reference sensing scheme for the TLC MRAM cell based on its unique property called state ordering. Simulation results show that compared to conventional design, our proposed self-reference scheme achieves on average 61% saving on sensing delay while also demonstrating significantly enhanced resilience to device parametric variations.

Full Text

Duke Authors

Cited Authors

  • Li, Z; Yan, B; Yang, L; Zhao, W; Chen, Y; Li, H

Published Date

  • July 27, 2015

Published In

Volume / Issue

  • 2015-July /

Start / End Page

  • 593 - 596

International Standard Serial Number (ISSN)

  • 0271-4310

International Standard Book Number 13 (ISBN-13)

  • 9781479983919

Digital Object Identifier (DOI)

  • 10.1109/ISCAS.2015.7168703

Citation Source

  • Scopus