UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy

Published

Journal Article

© 2017 Author(s). A high Al-content (y > 0.4) multi-quantum-well (MQW) structure with a quaternary InxAlyGa(1-x-y)N active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinement and room temperature ultraviolet-B (UVB) photoluminescence an order of magnitude stronger than that of a reference InxAlyGa(1-x-y)N thin film with comparable composition and thickness. The samples were characterized using spectroscopic ellipsometry, atomic force microscopy, and high-resolution X-ray diffraction. Numerical simulations suggest that the UVB emission efficiency is limited by dislocation-related non-radiative recombination centers in the MQW and at the MQW - buffer interface. Emission efficiency can be significantly improved by reducing the dislocation density from 109cm-2 to 107cm-2 and by optimizing the width and depth of the quantum wells.

Full Text

Duke Authors

Cited Authors

  • Kong, W; Roberts, AT; Jiao, WY; Fournelle, J; Kim, TH; Losurdo, M; Everitt, HO; Brown, AS

Published Date

  • March 1, 2017

Published In

Volume / Issue

  • 7 / 3

Electronic International Standard Serial Number (EISSN)

  • 2158-3226

Digital Object Identifier (DOI)

  • 10.1063/1.4973637

Citation Source

  • Scopus