Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results


Journal Article

© 2011-2012 IEEE. We present experimental results which show that oxygen-related precipitate nuclei (OPN) present in p-doped, n-Type, Czochralski wafers can be dissolved using a flash-Annealing process, yielding very high quality wafers for high-efficiency solar cells. Flash annealing consists of heating a wafer in an optical furnace to temperature between 1150 and 1250 °C for a short time. This process produces a large increase in the minority carrier lifetime (MCLT) and homogenizes each wafer. We have tested wafers from different axial locations of two ingots. All wafers reach nearly the same high value of MCLT. The OPN dissolution is confirmed by oxygen analysis using Fourier transform infrared spectra and injection-level dependence of MCLT.

Full Text

Duke Authors

Cited Authors

  • Sopori, B; Basnyat, P; Devayajanam, S; Tan, T; Upadhyaya, A; Tate, K; Rohatgi, A; Xu, H

Published Date

  • January 1, 2017

Published In

Volume / Issue

  • 7 / 1

Start / End Page

  • 97 - 103

International Standard Serial Number (ISSN)

  • 2156-3381

Digital Object Identifier (DOI)

  • 10.1109/JPHOTOV.2016.2621345

Citation Source

  • Scopus