Recent Technology Advances of Emerging Memories
Publication
, Journal Article
Chen, Y; Li, HH; Bayram, I; Eken, E
Published in: IEEE Design and Test
June 1, 2017
Phase change memory, spin-transfer torque random access memory, and resistive random access memory are three major emerging memory technologies that receive tremendous attentions from both academia and industry. In this survey article, the authors summarize the latest research progress of these technologies in device engineering, circuit design, computer architecture, and application. - Tei-Wei Kuo, National Taiwan University
Duke Scholars
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Published In
IEEE Design and Test
DOI
ISSN
2168-2356
Publication Date
June 1, 2017
Volume
34
Issue
3
Start / End Page
8 / 22
Citation
APA
Chicago
ICMJE
MLA
NLM
Chen, Y., Li, H. H., Bayram, I., & Eken, E. (2017). Recent Technology Advances of Emerging Memories. IEEE Design and Test, 34(3), 8–22. https://doi.org/10.1109/MDAT.2017.2685381
Chen, Y., H. H. Li, I. Bayram, and E. Eken. “Recent Technology Advances of Emerging Memories.” IEEE Design and Test 34, no. 3 (June 1, 2017): 8–22. https://doi.org/10.1109/MDAT.2017.2685381.
Chen Y, Li HH, Bayram I, Eken E. Recent Technology Advances of Emerging Memories. IEEE Design and Test. 2017 Jun 1;34(3):8–22.
Chen, Y., et al. “Recent Technology Advances of Emerging Memories.” IEEE Design and Test, vol. 34, no. 3, June 2017, pp. 8–22. Scopus, doi:10.1109/MDAT.2017.2685381.
Chen Y, Li HH, Bayram I, Eken E. Recent Technology Advances of Emerging Memories. IEEE Design and Test. 2017 Jun 1;34(3):8–22.
Published In
IEEE Design and Test
DOI
ISSN
2168-2356
Publication Date
June 1, 2017
Volume
34
Issue
3
Start / End Page
8 / 22