Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

Published

Journal Article

© 2017 Author(s). The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (<50% spread). The performance of our device demonstrates a feasible path to dramatic improvements in lithographic patterning systems, enabling continued progress in existing industries and opening opportunities in nanomanufacturing.

Full Text

Duke Authors

Cited Authors

  • Kirley, MP; Aloui, T; Glass, JT

Published Date

  • June 5, 2017

Published In

Volume / Issue

  • 110 / 23

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.4984955

Citation Source

  • Scopus