Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

Published

Journal Article

© 2017 Author(s). We investigate the change of the valence band energy of GaAs 1-x Bi x (0<0.025) as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE) was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that ∼75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.

Full Text

Duke Authors

Cited Authors

  • Collar, K; Li, J; Jiao, W; Guan, Y; Losurdo, M; Humlicek, J; Brown, AS

Published Date

  • July 1, 2017

Published In

Volume / Issue

  • 7 / 7

Electronic International Standard Serial Number (EISSN)

  • 2158-3226

Digital Object Identifier (DOI)

  • 10.1063/1.4986751

Citation Source

  • Scopus