Integration of silk protein in organic and light-emitting transistors

Journal Article (Journal Article)

We present the integration of a natural protein into electronic and optoelectronic devices by using silk fibroin as a thin film dielectric in an organic thin film field-effect transistor (OFET) ad an organic light emitting transistor device (OLET) structures. Both n- (perylene) and p-type (thiophene) silk-based OFETs are demonstrated. The measured electrical characteristics are in agreement with high-efficiency standard organic transistors, namely charge mobility of the order of 10-2 cm2/V s and on/off ratio of 104. The silk-based optoelectronic element is an advanced unipolar n-type OLET that yields a light emission of 100 nW. © 2011 Elsevier B.V. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Capelli, R; Amsden, JJ; Generali, G; Toffanin, S; Benfenati, V; Muccini, M; Kaplan, DL; Omenetto, FG; Zamboni, R

Published Date

  • January 1, 2011

Published In

Volume / Issue

  • 12 / 7

Start / End Page

  • 1146 - 1151

International Standard Serial Number (ISSN)

  • 1566-1199

Digital Object Identifier (DOI)

  • 10.1016/j.orgel.2011.04.005

Citation Source

  • Scopus