High-speed, solution-coatable memory based on Cu-SiO2 core-shell nanowires

Published

Journal Article

© The Royal Society of Chemistry 2016. Printable electronics has the potential to drastically reduce the environmental and economic costs associated with the production of electronic devices, as well as enable rapid prototyping of circuits and their printing on demand, similar to what 3D printing has done for structural objects. A major barrier to the realization of printable computers that can run programs is the lack of a solution-coatable non-volatile memory with performance metrics comparable to silicon-based devices. Here we demonstrate a non-volatile memory based on Cu-SiO2 core-shell nanowires that can be printed from solution and exhibits on-off ratios of 106, switching speeds of 50 ns, a low operating voltage of 2 V, and operates for at least 104 cycles without failure. Each of these metrics is similar to or better than Flash memory (the write speed is 20 times faster than Flash). Memory architectures based on the individual memory cells demonstrated here could enable the printing of the more complex, embedded computing devices that are expected to make up an internet of things.

Full Text

Duke Authors

Cited Authors

  • Flowers, PF; Catenacci, MJ; Wiley, BJ

Published Date

  • July 1, 2016

Published In

Volume / Issue

  • 1 / 4

Start / End Page

  • 313 - 316

Electronic International Standard Serial Number (EISSN)

  • 2055-6764

International Standard Serial Number (ISSN)

  • 2055-6756

Digital Object Identifier (DOI)

  • 10.1039/c6nh00020g

Citation Source

  • Scopus