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Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement

Publication ,  Conference
Dong, X; Wu, X; Sun, G; Xie, Y; Li, H; Chen, Y
Published in: Proceedings - Design Automation Conference
September 17, 2008

Magnetic Random Access Memory (MRAM) has been considered as a promising memory technology due to many attractive properties. Integrating MRAM with CMOS logic may incur extra manufacture cost, due to its hybrid magnetic-CMOS fabrication process. Stacking MRAM on top of CMOS logics using 3D integration is a way to minimize this cost overhead. In this paper, we discuss the circuit design issues for MRAM, and present the MRAM cache model. Based on the model, we compare MRAM against SRAM and DRAM in terms of area, performance, and energy. Finally we conduct architectural evaluation for 3D microprocessor stacking with MRAM. The experimental results show that MRAM stacking offers competitive IPC performance with a large reduction in power consumption compared to SRAM and DRAM counterparts. Copyright 2008 ACM.

Duke Scholars

Published In

Proceedings - Design Automation Conference

DOI

ISSN

0738-100X

ISBN

9781605581156

Publication Date

September 17, 2008

Start / End Page

554 / 559
 

Citation

APA
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ICMJE
MLA
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Dong, X., Wu, X., Sun, G., Xie, Y., Li, H., & Chen, Y. (2008). Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement. In Proceedings - Design Automation Conference (pp. 554–559). https://doi.org/10.1109/DAC.2008.4555878
Dong, X., X. Wu, G. Sun, Y. Xie, H. Li, and Y. Chen. “Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement.” In Proceedings - Design Automation Conference, 554–59, 2008. https://doi.org/10.1109/DAC.2008.4555878.
Dong X, Wu X, Sun G, Xie Y, Li H, Chen Y. Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement. In: Proceedings - Design Automation Conference. 2008. p. 554–9.
Dong, X., et al. “Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement.” Proceedings - Design Automation Conference, 2008, pp. 554–59. Scopus, doi:10.1109/DAC.2008.4555878.
Dong X, Wu X, Sun G, Xie Y, Li H, Chen Y. Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement. Proceedings - Design Automation Conference. 2008. p. 554–559.

Published In

Proceedings - Design Automation Conference

DOI

ISSN

0738-100X

ISBN

9781605581156

Publication Date

September 17, 2008

Start / End Page

554 / 559