A 1.0V 45nm nonvolatile magnetic latch design and its robustness analysis

Published

Conference Paper

A new nonvolatile latch design is proposed based on the magnetic tunneling junction (MTJ) devices. In the standby mode, the latched data can be retained in the MTJs without consuming any power. Two types of operation errors, namely, persistent and non-persistent errors, are quantitatively analyzed by including the process variations and thermal fluctuations during the read and write operations. A design at 45nm technology node is used as the example to discuss the design tradeoffs. © 2011 IEEE.

Full Text

Duke Authors

Cited Authors

  • Wang, P; Chen, X; Chen, Y; Li, H; Kang, S; Zhu, X; Wu, W

Published Date

  • November 9, 2011

Published In

International Standard Serial Number (ISSN)

  • 0886-5930

International Standard Book Number 13 (ISBN-13)

  • 9781457702228

Digital Object Identifier (DOI)

  • 10.1109/CICC.2011.6055392

Citation Source

  • Scopus