Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates.

Published

Journal Article

We report on enhanced control of the growth of lateral GaAs nanowires (NWs) embedded in epitaxial (100) GaAsBi thin films enabled by the use of vicinal substrates and the growth-condition dependent role of Bi as a surfactant. Enhanced step-flow growth is achieved through the use of vicinal substrates and yields unidirectional nanowire growth. The addition of Bi during GaAsBi growth enhances Ga adatom diffusion anisotropy and modifies incorporation rates at steps in comparison to GaAs growth yielding lower density but longer NWs. The NWs grown on vicinal substrates grew unidirectionally towards the misorientation direction when Bi was present. The III/V flux ratio significantly impacts the size, shape and density of the resulting NWs. These results suggest that utilizing growth conditions which enhance step-flow growth enable enhanced control of lateral nanostructures.

Full Text

Duke Authors

Cited Authors

  • Collar, KN; Li, J; Jiao, W; Kong, W; Brown, AS

Published Date

  • January 2018

Published In

Volume / Issue

  • 29 / 3

Start / End Page

  • 035604 -

PubMed ID

  • 29186010

Pubmed Central ID

  • 29186010

Electronic International Standard Serial Number (EISSN)

  • 1361-6528

International Standard Serial Number (ISSN)

  • 0957-4484

Digital Object Identifier (DOI)

  • 10.1088/1361-6528/aa9e34

Language

  • eng