Adaptive refreshing and read voltage control scheme for FeDRAM

Conference Paper

Ferroelectric Field Effect Transistor (FeFET) is a promising nonvolatile device which provides high integration density, fast programming speed, and excellent CMOS compatibility. In general, the non-volatility of FeFET is impacted by its physical structure and there is a trade-off between data retention time and device endurance. To improve the cell endurance, for example, the ferroelectric layer of FeFET needs to be programmed to a low polarization level, leading to a short retention time. In ferroelectric DRAM (FeDRAM) design, degradation in FeFET retention time and write-read disturbance requires the FeDRAM cells to b e periodically refreshed in order to prevent data loss. In this work, we propose a novel adaptive refreshing and read voltage control scheme to minimize the energy overheads associated with FeDRAM refreshing while still achieve high cell access reliability.

Full Text

Duke Authors

Cited Authors

  • Bayram, I; Eken, E; Wang, X; Sun, X; Ma, TP; Chen, Y

Published Date

  • July 29, 2016

Published In

Volume / Issue

  • 2016-July /

Start / End Page

  • 1154 - 1157

International Standard Serial Number (ISSN)

  • 0271-4310

International Standard Book Number 13 (ISBN-13)

  • 9781479953400

Digital Object Identifier (DOI)

  • 10.1109/ISCAS.2016.7527450

Citation Source

  • Scopus