The bipolar and unipolar reversible behavior on the forgetting memristor model

Journal Article (Journal Article)

In the further study of our previous forgetting model in Chen et al. (2013) [27], we found that the three dimensional (3D) model can be a more general mathematical model compared with the one dimensional (1D) model. It can describe not only the behaviors of the bipolar, the unipolar and the bipolar with forgetting effect memristor, but also the reversible process between the bipolar and the unipolar. The corresponding PSPICE model is provided, and the maiden simulations for different types of memristor verify the functions of the 3D memristor model.

Full Text

Duke Authors

Cited Authors

  • Chen, L; Li, C; Huang, T; Hu, X; Chen, Y

Published Date

  • January 1, 2016

Published In

Volume / Issue

  • 171 /

Start / End Page

  • 1637 - 1643

Electronic International Standard Serial Number (EISSN)

  • 1872-8286

International Standard Serial Number (ISSN)

  • 0925-2312

Digital Object Identifier (DOI)

  • 10.1016/j.neucom.2015.06.067

Citation Source

  • Scopus