STT-RAM cell design optimization for persistent and non-persistent error rate reduction: A statistical design view


Conference Paper

The rapidly increased demands for memory in electronic industry and the significant technical scaling challenges of all conventional memory technologies motivated the researches on the next generation memory technology. As one promising candidate, spin-transfer torque random access memory (STT-RAM) features fast access time, high density, non-volatility, and good CMOS process compatibility. However, like all other nano-scale devices, the performance and reliability of STT-RAM cells are severely affected by process variations, intrinsic device operating uncertainties and environmental fluctuations. In this work, we systematically analyze the impacts of CMOS and MTJ process variations, MTJ switching uncertainties induced by thermal fluctuations and working temperature on the performance and reliability of STT-RAM cells. A combined circuit and magnetic simulation platform is also established to quantitatively analyze the persistent and non-persistent error rates during the STT-RAM cell operations. Finally, an optimization flow and its effectiveness are depicted by using some STT-RAM cell designs as case study. © 2011 IEEE.

Full Text

Duke Authors

Cited Authors

  • Zhang, Y; Wang, X; Chen, Y

Published Date

  • December 1, 2011

Published In

Start / End Page

  • 471 - 477

International Standard Serial Number (ISSN)

  • 1092-3152

International Standard Book Number 13 (ISBN-13)

  • 9781457713989

Digital Object Identifier (DOI)

  • 10.1109/ICCAD.2011.6105370

Citation Source

  • Scopus