Spintronic memristor devices and application

Conference Paper

Spintronic memristor devices based upon spin torque induced magnetization motion are presented and potential application examples are given. The structure and material of these proposed spin torque memristors are based upon existing (and/or commercialized) magnetic devices and can be easily integrated on top of a CMOS. This provides better controllability and flexibility to realize the promises of nanoscale memristors. Utilizing its unique device behavior, the paper explores spintronic memristor potential applications in multibit data storage and logic, novel sensing scheme, power management and information security. © 2010 EDAA.

Duke Authors

Cited Authors

  • Wang, X; Chen, Y

Published Date

  • June 9, 2010

Published In

Start / End Page

  • 667 - 672

International Standard Serial Number (ISSN)

  • 1530-1591

International Standard Book Number 13 (ISBN-13)

  • 9783981080162

Citation Source

  • Scopus