Combined magnetic-and circuit-level enhancements for the nondestructive self-reference scheme of STT-RAM

Conference Paper

A nondestructive self-reference read scheme (NSRS) was recently proposed to overcome the bit-to-bit variation in Spin-Transfer Torque Random Access Memory (STT-RAM). In this work, we introduced three magnetic-and circuit-level techniques, including 1) R-I curve skewing, 2) yield-driven sensing current selection, and 3) ratio matching to improve the sense margin and robustness of NSRS. The measurements of our 16Kb STT-RAM test chip show that compared to the original NSRS design, our proposed technologies successfully increased the sense margin by 2.5X with minimized impacts on the memory reliability and hardware cost. Copyright 2010 ACM.

Full Text

Duke Authors

Cited Authors

  • Chen, Y; Li, H; Wang, X; Zhu, W; Xu, W; Zhang, T

Published Date

  • October 21, 2010

Published In

Start / End Page

  • 1 - 6

International Standard Serial Number (ISSN)

  • 1533-4678

International Standard Book Number 13 (ISBN-13)

  • 9781450301466

Digital Object Identifier (DOI)

  • 10.1145/1840845.1840847

Citation Source

  • Scopus