Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin

Conference Paper

This paper presents a new memory cell structure for content addressable memory (CAM) based on magnetic tunneling junction (MTJ). Each CAM cell uses a pair of differential MTJs as basic storage element and incorporates transistors to greatly improve the cell search noise margin at low sensing current. Using the same design principle, we further develop an area-efficient cell structure for ternary CAM (TCAM), which occupies about 25% less area compared with directly using two CAM cells to form one TCAM cell. The effectiveness of the proposed CAM and TCAM cell structures has been demonstrated by circuit simulation at 0.18μm CMOS technology. ©2008 IEEE.

Full Text

Duke Authors

Cited Authors

  • Xu, W; Zhang, T; Chen, Y

Published Date

  • September 19, 2008

Published In

Start / End Page

  • 1898 - 1901

International Standard Serial Number (ISSN)

  • 0271-4310

International Standard Book Number 13 (ISBN-13)

  • 9781424416844

Digital Object Identifier (DOI)

  • 10.1109/ISCAS.2008.4541813

Citation Source

  • Scopus