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High-Dimensional and Multiple-Failure-Region Importance Sampling for SRAM Yield Analysis

Publication ,  Journal Article
Wang, M; Yan, C; Li, X; Zhou, D; Zeng, X
Published in: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
March 1, 2017

The failure rate of static RAM (SRAM) cells is restricted to be extremely low to ensure sufficient high yield for the entire chip. In addition, multiple performances of interest and influences from peripherals make SRAM failure rate estimation a high-dimensional multiple-failure-region problem. This paper proposes a new method featuring a multistart-point sequential quadratic programming (SQP) framework to extend minimized norm importance sampling (IS) to address this problem. Failure regions in the variation space are first found by the low-discrepancy sampling sequence. Afterward, start points are generated in all identified failure regions and local optimizations based on SQP are invoked from these start points searching for the optimal shift vectors (OSVs). Based on the OSVs, a Gaussian mixture distorted distribution is constructed for IS. To further reduce the computational cost of IS while fully considering the influence of increasing dimensionality, an adaptive model training framework is proposed to keep high efficiency for both low- A nd high-dimensional problems. The experimental results show that the proposed method can not only approximate failure rate with high accuracy and efficiency in low-dimensional cases but also keep these features in high-dimensional ones.

Duke Scholars

Published In

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

DOI

ISSN

1063-8210

Publication Date

March 1, 2017

Volume

25

Issue

3

Start / End Page

806 / 819

Related Subject Headings

  • Computer Hardware & Architecture
  • 4009 Electronics, sensors and digital hardware
  • 1006 Computer Hardware
  • 0906 Electrical and Electronic Engineering
  • 0805 Distributed Computing
 

Citation

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ICMJE
MLA
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Wang, M., Yan, C., Li, X., Zhou, D., & Zeng, X. (2017). High-Dimensional and Multiple-Failure-Region Importance Sampling for SRAM Yield Analysis. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 25(3), 806–819. https://doi.org/10.1109/TVLSI.2016.2601606
Wang, M., C. Yan, X. Li, D. Zhou, and X. Zeng. “High-Dimensional and Multiple-Failure-Region Importance Sampling for SRAM Yield Analysis.” IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25, no. 3 (March 1, 2017): 806–19. https://doi.org/10.1109/TVLSI.2016.2601606.
Wang M, Yan C, Li X, Zhou D, Zeng X. High-Dimensional and Multiple-Failure-Region Importance Sampling for SRAM Yield Analysis. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 2017 Mar 1;25(3):806–19.
Wang, M., et al. “High-Dimensional and Multiple-Failure-Region Importance Sampling for SRAM Yield Analysis.” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 25, no. 3, Mar. 2017, pp. 806–19. Scopus, doi:10.1109/TVLSI.2016.2601606.
Wang M, Yan C, Li X, Zhou D, Zeng X. High-Dimensional and Multiple-Failure-Region Importance Sampling for SRAM Yield Analysis. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 2017 Mar 1;25(3):806–819.

Published In

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

DOI

ISSN

1063-8210

Publication Date

March 1, 2017

Volume

25

Issue

3

Start / End Page

806 / 819

Related Subject Headings

  • Computer Hardware & Architecture
  • 4009 Electronics, sensors and digital hardware
  • 1006 Computer Hardware
  • 0906 Electrical and Electronic Engineering
  • 0805 Distributed Computing