Surface-potential-based compact model of bulk MOSFET


Book Section

We review surface-potential-based approach to compact modeling of bulk MOS transistors and provide introduction to the widely used PSP model jointly developed by the Arizona State University and NXP Semiconductors. The emphasis is on the interplay between the mathematical structure of the compact model and its capabilities for the circuit design applications. © 2010 Springer Science+Business Media B.V.

Full Text

Duke Authors

Cited Authors

  • Gildenblat, G; Wu, W; Li, X; Van Langevelde, R; Scholten, AJ; Smit, GDJ; Klaassen, DBM

Published Date

  • December 1, 2010

Book Title

  • Compact Modeling: Principles, Techniques and Applications

Start / End Page

  • 3 - 40

International Standard Book Number 13 (ISBN-13)

  • 9789048186136

Digital Object Identifier (DOI)

  • 10.1007/978-90-481-8614-3_1

Citation Source

  • Scopus