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A compact model for valence-band electron tunneling current in partially depleted SOI MOSFETs

Publication ,  Journal Article
Wu, W; Li, X; Gildenblat, G; Workman, GO; Veeraraghavan, S; McAndrew, CC; van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM
Published in: IEEE Transactions on Electron Devices
February 1, 2007

The valence-band electron (EVB) tunneling current in partially depleted silicon-on-insulator (SOI) MOSFETs increases as the gate oxide gets thinner and affects the dynamic behavior of devices and circuits. We present an engineering model of EVB tunneling current based on the surface-potential formulation. The new model is implemented in a SOI MOSFET compact model and is used to study the impact of EVB tunneling on circuit performance. Simulations of stacked logic gates show that the EVB tunneling current not only boosts circuit switching speed but also mitigates the history dependence of propagation delays. © 2007 IEEE.

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Published In

IEEE Transactions on Electron Devices

DOI

ISSN

0018-9383

Publication Date

February 1, 2007

Volume

54

Issue

2

Start / End Page

316 / 322

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering
 

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Wu, W., Li, X., Gildenblat, G., Workman, G. O., Veeraraghavan, S., McAndrew, C. C., … Klaassen, D. B. M. (2007). A compact model for valence-band electron tunneling current in partially depleted SOI MOSFETs. IEEE Transactions on Electron Devices, 54(2), 316–322. https://doi.org/10.1109/TED.2006.888750
Wu, W., X. Li, G. Gildenblat, G. O. Workman, S. Veeraraghavan, C. C. McAndrew, R. van Langevelde, G. D. J. Smit, A. J. Scholten, and D. B. M. Klaassen. “A compact model for valence-band electron tunneling current in partially depleted SOI MOSFETs.” IEEE Transactions on Electron Devices 54, no. 2 (February 1, 2007): 316–22. https://doi.org/10.1109/TED.2006.888750.
Wu W, Li X, Gildenblat G, Workman GO, Veeraraghavan S, McAndrew CC, et al. A compact model for valence-band electron tunneling current in partially depleted SOI MOSFETs. IEEE Transactions on Electron Devices. 2007 Feb 1;54(2):316–22.
Wu, W., et al. “A compact model for valence-band electron tunneling current in partially depleted SOI MOSFETs.” IEEE Transactions on Electron Devices, vol. 54, no. 2, Feb. 2007, pp. 316–22. Scopus, doi:10.1109/TED.2006.888750.
Wu W, Li X, Gildenblat G, Workman GO, Veeraraghavan S, McAndrew CC, van Langevelde R, Smit GDJ, Scholten AJ, Klaassen DBM. A compact model for valence-band electron tunneling current in partially depleted SOI MOSFETs. IEEE Transactions on Electron Devices. 2007 Feb 1;54(2):316–322.

Published In

IEEE Transactions on Electron Devices

DOI

ISSN

0018-9383

Publication Date

February 1, 2007

Volume

54

Issue

2

Start / End Page

316 / 322

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering