A compact model for valence-band electron tunneling current in partially depleted SOI MOSFETs

Published

Journal Article

The valence-band electron (EVB) tunneling current in partially depleted silicon-on-insulator (SOI) MOSFETs increases as the gate oxide gets thinner and affects the dynamic behavior of devices and circuits. We present an engineering model of EVB tunneling current based on the surface-potential formulation. The new model is implemented in a SOI MOSFET compact model and is used to study the impact of EVB tunneling on circuit performance. Simulations of stacked logic gates show that the EVB tunneling current not only boosts circuit switching speed but also mitigates the history dependence of propagation delays. © 2007 IEEE.

Full Text

Duke Authors

Cited Authors

  • Wu, W; Li, X; Gildenblat, G; Workman, GO; Veeraraghavan, S; McAndrew, CC; van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM

Published Date

  • February 1, 2007

Published In

Volume / Issue

  • 54 / 2

Start / End Page

  • 316 - 322

International Standard Serial Number (ISSN)

  • 0018-9383

Digital Object Identifier (DOI)

  • 10.1109/TED.2006.888750

Citation Source

  • Scopus