Parameter extracttion for the PSP MOSFET model by the combination of genetic and levenberg-marquardt algorithms

Published

Conference Paper

Based on the combination of the genetic and Levenberg-Marquardt algorithms, a new method is developed to perform both local and global parameter extraction for the PSP MOSFET model. It has been successfully used to extract parameter sets for a 65-nm technology node. Numerical examples demonstrate its ability to obtain highly accurate model parameter values without excessive computational cost.

Full Text

Duke Authors

Cited Authors

  • Zhou, Q; Yao, W; Wu, W; Li, X; Zhu, Z; Gildenblat, G

Published Date

  • July 15, 2009

Published In

  • Ieee International Conference on Microelectronic Test Structures

Start / End Page

  • 137 - 142

International Standard Book Number 13 (ISBN-13)

  • 9781424442591

Digital Object Identifier (DOI)

  • 10.1109/ICMTS.2009.4814627

Citation Source

  • Scopus