PSP-SOI: A surface potential based compact model of partially depleted SOI MOSFETs

Published

Conference Paper

This paper reports recent progress on partially depleted (PD) SOI modeling using a surface potential based approach. The new model, called PSP-SOI, Is formulated within the framework of the latest Industry standard bulk MOSFET model PSP. In addition to Its physics-based formulation and scalability Inherited from PSP, PSP-SOI captures SOI specific effects by Including a floating body simulation capability, a parasitic bipolar model, and self-heating. A nonlinear body resistance Is Included for modeling body-contacted SOI devices. The PSP-SOI model has been extensively tested on several PD/SOI technologies. ©2007 IEEE.

Full Text

Duke Authors

Cited Authors

  • Wu, W; Li, X; Gildenblat, G; Workman, G; Veeraraghavan, S; McAndrew, C; Van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM; Watts, J

Published Date

  • January 1, 2007

Published In

Start / End Page

  • 41 - 48

International Standard Serial Number (ISSN)

  • 0886-5930

International Standard Book Number 10 (ISBN-10)

  • 1424407869

International Standard Book Number 13 (ISBN-13)

  • 9781424407866

Digital Object Identifier (DOI)

  • 10.1109/CICC.2007.4405678

Citation Source

  • Scopus