Benchmarking the PSP compact model for MOS transistors

Published

Conference Paper

Recently, the PSP model was selected as the first surface-potential-based industry standard compact MOSFET model. This work presents the results of several qualitative "benchmark" tests that over the last two years were used to verify the physical behavior of the new model and its usefulness for future generations of CMOS IC design. These include newly developed tests and previously unavailable experimental data stemming from low-power, RF, mixed-signal, and analog applications of MOSFETs. © 2007 IEEE.

Full Text

Duke Authors

Cited Authors

  • Li, X; Wu, W; Jha, A; Gildenblat, G; Van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM; McAndrew, CC; Watts, J; Olsen, M; Coram, G; Chaudhrytt, S; Victory, J

Published Date

  • September 27, 2007

Published In

  • Ieee International Conference on Microelectronic Test Structures

Start / End Page

  • 259 - 264

International Standard Book Number 10 (ISBN-10)

  • 142440780X

International Standard Book Number 13 (ISBN-13)

  • 9781424407804

Digital Object Identifier (DOI)

  • 10.1109/ICMTS.2007.374495

Citation Source

  • Scopus