Statistical modeling with the PSP MOSFET model

Published

Journal Article

PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies. © 2010 IEEE.

Full Text

Duke Authors

Cited Authors

  • Li, X; McAndrew, CC; Wu, W; Chaudhry, S; Victory, J; Gildenblat, G

Published Date

  • April 1, 2010

Published In

Volume / Issue

  • 29 / 4

Start / End Page

  • 599 - 609

International Standard Serial Number (ISSN)

  • 0278-0070

Digital Object Identifier (DOI)

  • 10.1109/TCAD.2010.2042892

Citation Source

  • Scopus