Statistical modeling with the PSP MOSFET model
PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies. © 2010 IEEE.
Li, X; McAndrew, CC; Wu, W; Chaudhry, S; Victory, J; Gildenblat, G
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