PSP: An advanced surface-potential-based MOSFET model for circuit simulation

Journal Article (Journal Article)

This paper describes the latest and most advanced surface-potential-based model jointly developed by The Pennsylvania State University and Philips. Specific topics include model structure, mobility and velocity saturation description, further development and verification of symmetric linearization method, recent advances in the computational techniques for the surface potential, modeling of gate tunneling current, inclusion of the retrograde impurity profile, and noise sources. The emphasis of this paper is on incorporating the recent advances in MOS device physics and modeling within the compact modeling context. © 2006 IEEE.

Full Text

Duke Authors

Cited Authors

  • Gildenblat, G; Li, X; Wu, W; Wang, H; Jha, A; Van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM

Published Date

  • September 1, 2006

Published In

Volume / Issue

  • 53 / 9

Start / End Page

  • 1979 - 1993

International Standard Serial Number (ISSN)

  • 0018-9383

Digital Object Identifier (DOI)

  • 10.1109/TED.2005.881006

Citation Source

  • Scopus