PSP: An advanced surface-potential-based MOSFET model for circuit simulation
Publication
, Journal Article
Gildenblat, G; Li, X; Wu, W; Wang, H; Jha, A; Van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM
Published in: IEEE Transactions on Electron Devices
September 1, 2006
This paper describes the latest and most advanced surface-potential-based model jointly developed by The Pennsylvania State University and Philips. Specific topics include model structure, mobility and velocity saturation description, further development and verification of symmetric linearization method, recent advances in the computational techniques for the surface potential, modeling of gate tunneling current, inclusion of the retrograde impurity profile, and noise sources. The emphasis of this paper is on incorporating the recent advances in MOS device physics and modeling within the compact modeling context. © 2006 IEEE.
Duke Scholars
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Published In
IEEE Transactions on Electron Devices
DOI
ISSN
0018-9383
Publication Date
September 1, 2006
Volume
53
Issue
9
Start / End Page
1979 / 1993
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
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Gildenblat, G., Li, X., Wu, W., Wang, H., Jha, A., Van Langevelde, R., … Klaassen, D. B. M. (2006). PSP: An advanced surface-potential-based MOSFET model for circuit simulation. IEEE Transactions on Electron Devices, 53(9), 1979–1993. https://doi.org/10.1109/TED.2005.881006
Gildenblat, G., X. Li, W. Wu, H. Wang, A. Jha, R. Van Langevelde, G. D. J. Smit, A. J. Scholten, and D. B. M. Klaassen. “PSP: An advanced surface-potential-based MOSFET model for circuit simulation.” IEEE Transactions on Electron Devices 53, no. 9 (September 1, 2006): 1979–93. https://doi.org/10.1109/TED.2005.881006.
Gildenblat G, Li X, Wu W, Wang H, Jha A, Van Langevelde R, et al. PSP: An advanced surface-potential-based MOSFET model for circuit simulation. IEEE Transactions on Electron Devices. 2006 Sep 1;53(9):1979–93.
Gildenblat, G., et al. “PSP: An advanced surface-potential-based MOSFET model for circuit simulation.” IEEE Transactions on Electron Devices, vol. 53, no. 9, Sept. 2006, pp. 1979–93. Scopus, doi:10.1109/TED.2005.881006.
Gildenblat G, Li X, Wu W, Wang H, Jha A, Van Langevelde R, Smit GDJ, Scholten AJ, Klaassen DBM. PSP: An advanced surface-potential-based MOSFET model for circuit simulation. IEEE Transactions on Electron Devices. 2006 Sep 1;53(9):1979–1993.
Published In
IEEE Transactions on Electron Devices
DOI
ISSN
0018-9383
Publication Date
September 1, 2006
Volume
53
Issue
9
Start / End Page
1979 / 1993
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering