SP-SOI: A third generation surface potential based compact SOI MOSFET model


Conference Paper

We report the first SOI MOSFET model that takes advantage of the recent progress in bulk MOSFET modeling. The surface-potential-based model is implemented without iterative loops, and includes physical modeling of the moderate inversion region and all small-geometry effects without relying on the traditional threshold-voltage-based formulation. The new model is verified for a 90 nm node process (40nm polysilicon length) and is implemented in a circuit simulator. © 2005 IEEE.

Full Text

Duke Authors

Cited Authors

  • Wu, W; Li, X; Wang, H; Gildenblat, G; Workman, G; Veeraraghavan, S; McAndrew, C

Published Date

  • December 1, 2005

Published In

Volume / Issue

  • 2005 /

Start / End Page

  • 814 - 817

International Standard Serial Number (ISSN)

  • 0886-5930

International Standard Book Number 10 (ISBN-10)

  • 0780390237

International Standard Book Number 13 (ISBN-13)

  • 9780780390232

Digital Object Identifier (DOI)

  • 10.1109/CICC.2005.1568795

Citation Source

  • Scopus