Theory and modeling techniques used in the PSP model

Conference Paper

This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include surface potential equation, generalized symmetric linearization method and non-uniformity of the vertical impurity profile.

Duke Authors

Cited Authors

  • Gildenblat, G; Li, X; Wang, H; Wu, W; Jha, A; Van Langevelde, R; Scholten, AJ; Smit, GDJ; Klaassen, DBM

Published Date

  • December 8, 2006

Published In

  • 2006 Nsti Nanotechnology Conference and Trade Show Nsti Nanotech 2006 Technical Proceedings

Volume / Issue

  • 3 /

Start / End Page

  • 604 - 609

Citation Source

  • Scopus