Unified non-quasi-static MOSFET model for large-signal and small-signal simulations

Published

Conference Paper

The spline-collocation-based non-quasi-static model is extended to include small-geometry effects and to enable both small-signal and large-signal simulations. The new NQS model has been implemented into circuit simulators using both SP and PSP models and verified using RF test data. Additional verification is provided by comparison with the results of numerical simulations and with the MM11 channel segmentation method. The large-signal and small-signal simulation results are compatible and consistent with the quasi-static formulation at low frequencies. © 2005 IEEE.

Full Text

Duke Authors

Cited Authors

  • Wang, H; Li, X; Wu, W; Gildenblat, G; Van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassent, DBM

Published Date

  • December 1, 2005

Published In

Volume / Issue

  • 2005 /

Start / End Page

  • 818 - 821

International Standard Serial Number (ISSN)

  • 0886-5930

International Standard Book Number 10 (ISBN-10)

  • 0780390237

International Standard Book Number 13 (ISBN-13)

  • 9780780390232

Digital Object Identifier (DOI)

  • 10.1109/CICC.2005.1568796

Citation Source

  • Scopus