Surface-potential-based MOSFET models with introduction to PSP


Conference Paper

We review compact modeling techniques that enable a surface-potential-based approach to modeling MOS transistors. These include symmetric linearization method, an analytical approximation of surface potential and surface-potential-based extrinsic device model. General techniques are illustrated by application to the PSP model. ©2009 IEEE.

Full Text

Duke Authors

Cited Authors

  • Gildenblat, G; Wu, W; Li, X; Zhu, Z; Smit, GDJ; Scholten, AJ; Klaassen, DBM

Published Date

  • November 18, 2009

Published In

  • 2009 Ieee 10th Annual Wireless and Microwave Technology Conference, Wamicon 2009

International Standard Book Number 13 (ISBN-13)

  • 9781424445653

Digital Object Identifier (DOI)

  • 10.1109/WAMICON.2009.5207226

Citation Source

  • Scopus