Improved parameter extraction procedure for PSP-based MOS varactor model
Publication
, Conference
Zhu, Z; Victory, J; Chaudhry, S; Dong, L; Yant, Z; Zheng, J; Wu, W; Li, X; Zhou, Q; Kolev, P; McAndrew, CC; Gildenbla, G
Published in: IEEE International Conference on Microelectronic Test Structures
July 15, 2009
We present an improved procedure for extracting parasitic capacitance parameters and gate current parameters for MOSYAR, the industry standard MOS varactor model. Our technique is verified against measured data from three technology nodes (180 nm, 130 nm and 65 nm), and is also used to validate the MOSYAR P-gatefPwell tunneling current sub-model.
Duke Scholars
Published In
IEEE International Conference on Microelectronic Test Structures
DOI
ISBN
9781424442591
Publication Date
July 15, 2009
Start / End Page
148 / 153
Citation
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Zhu, Z., Victory, J., Chaudhry, S., Dong, L., Yant, Z., Zheng, J., … Gildenbla, G. (2009). Improved parameter extraction procedure for PSP-based MOS varactor model. In IEEE International Conference on Microelectronic Test Structures (pp. 148–153). https://doi.org/10.1109/ICMTS.2009.4814629
Zhu, Z., J. Victory, S. Chaudhry, L. Dong, Z. Yant, J. Zheng, W. Wu, et al. “Improved parameter extraction procedure for PSP-based MOS varactor model.” In IEEE International Conference on Microelectronic Test Structures, 148–53, 2009. https://doi.org/10.1109/ICMTS.2009.4814629.
Zhu Z, Victory J, Chaudhry S, Dong L, Yant Z, Zheng J, et al. Improved parameter extraction procedure for PSP-based MOS varactor model. In: IEEE International Conference on Microelectronic Test Structures. 2009. p. 148–53.
Zhu, Z., et al. “Improved parameter extraction procedure for PSP-based MOS varactor model.” IEEE International Conference on Microelectronic Test Structures, 2009, pp. 148–53. Scopus, doi:10.1109/ICMTS.2009.4814629.
Zhu Z, Victory J, Chaudhry S, Dong L, Yant Z, Zheng J, Wu W, Li X, Zhou Q, Kolev P, McAndrew CC, Gildenbla G. Improved parameter extraction procedure for PSP-based MOS varactor model. IEEE International Conference on Microelectronic Test Structures. 2009. p. 148–153.
Published In
IEEE International Conference on Microelectronic Test Structures
DOI
ISBN
9781424442591
Publication Date
July 15, 2009
Start / End Page
148 / 153