Improved parameter extraction procedure for PSP-based MOS varactor model

Conference Paper

We present an improved procedure for extracting parasitic capacitance parameters and gate current parameters for MOSYAR, the industry standard MOS varactor model. Our technique is verified against measured data from three technology nodes (180 nm, 130 nm and 65 nm), and is also used to validate the MOSYAR P-gatefPwell tunneling current sub-model.

Full Text

Duke Authors

Cited Authors

  • Zhu, Z; Victory, J; Chaudhry, S; Dong, L; Yant, Z; Zheng, J; Wu, W; Li, X; Zhou, Q; Kolev, P; McAndrew, CC; Gildenbla, G

Published Date

  • July 15, 2009

Published In

  • Ieee International Conference on Microelectronic Test Structures

Start / End Page

  • 148 - 153

International Standard Book Number 13 (ISBN-13)

  • 9781424442591

Digital Object Identifier (DOI)

  • 10.1109/ICMTS.2009.4814629

Citation Source

  • Scopus