Benchmark tests for MOSFET compact models with application to the PSP model
This paper presents the results of several qualitative "benchmark" tests that were used to verify the physical behavior of the PSP model and its usefulness for future generations of CMOS IC design. These include newly developed tests and new experimental data stemming from low-power, RF, mixed-signal, and analog applications of MOSFETs. © 2009 IEEE.
Li, X; Wu, W; Jha, A; Gildenblat, G; van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM; McAndrew, CC; Watts, J; Olsen, CM; Coram, GJ; Chaudhry, S; Victory, J
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