A unified nonquasi-static MOSFET model for large-signal and small-signal simulations

Journal Article (Journal Article)

The spline collocation-based nonquasi-static (NQS) model is further developed to include all regions of operation and small-geometry effects. The new formulation provides a unified (hence consistent) approach to both large-signal and small-signal NQS modeling and is sufficiently flexible to work with any surface-potential-based MOSFET model. The model is verified through comparison with the channel segmentation method, two-dimensional numerical simulations, and experimental results and demonstrates a controlled tradeoff between model accuracy and efficiency. The new NQS model has been implemented into PSP model. Circuit simulations are given to demonstrate the accuracy and applicability of the new model. © 2006 IEEE.

Full Text

Duke Authors

Cited Authors

  • Wang, H; Li, X; Wu, W; Gildenblat, G; Van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM

Published Date

  • September 1, 2006

Published In

Volume / Issue

  • 53 / 9

Start / End Page

  • 2035 - 2042

International Standard Serial Number (ISSN)

  • 0018-9383

Digital Object Identifier (DOI)

  • 10.1109/TED.2005.881003

Citation Source

  • Scopus